冲击荷载下PZT5电畴翻转研究

摘要

利用分离式霍普金森压杆(SHPB)测量装置,结合谐振频率、电滞回线、X射线衍射3种方法对PZT5在冲击荷载作用下的电畴翻转进行实验分析.研究表明,在冲击荷载作用下,PZT5的应力应变曲线和应力电位移曲线存在明显的相似性;冲击前后PZT5的谐振频率、矫顽电场的差值以及90°畴变百分比都随着应变率的增加而增加;压电陶瓷内部90°畴变百分比随着最大应力逐渐增加,当最大应力达到180 MPa左右,PZT5内部电畴翻转明显加剧.%Used SHPB measurement device, the domain switching of the piezoelectric ceramic was researched and analyzed under impact loading combining with the resonant frequency, electric hysteresis loop and X-ray diffraction.Results showed that after impacted the stress-strain curve of PZT5 was similar with the stress-electric displacement curve.Compared before impact to after, the difference in resonant frequency and coercive electric field of PZT5 increased with increasing strain rate.The percentage of 90°domain switching in PZT5 piezoelectric ceramic increased with increasing strain rate and stress.When stress reached to 180 MPa, domain switching obviously aggravated.