Structural Damage Law of Semiconductor Bridge Detonator under Impact and Overload Environment

摘要

Aiming to know the requirement of penetrating the munition semiconductor bridge detonator under the impact overload environment, the impact overload simulation device and the structural finite element software ANSYS/AUTODYN are used to study the variation of the axial dimension, charge and the chip gap of the semiconductor bridge detonator under the impact overload environment. The typical semiconductor bridge detonator is affected by the acceleration, and the strain increases with the increase of the acceleration. The semiconductor bridge detonator shows axial compression, in which the size becomes smaller, and the structural deformation occurs at the output end of the semiconductor bridge detonator. The typical semiconductor bridge detonator is elastically deformed when the acceleration is less than 40 000 g. When the acceleration is more than40 000 g, the semiconductor bridge detonator housing is plastically deformed. The gap between the drug column and the chip is divided into three stages with the increase of the acceleration. Initially,with the increase of the acceleration, the gap rises rapidly until the acceleration reaches 43 000 g,and when the gap reaches the maximum, the gap decreases rapidly with the increase of the acceleration. When the acceleration reaches 57 000 g, the gap tends to be 0 μm in the initial state, and then the gap does not change with the acceleration to keep tending to 0 μm.