磁控溅射制备的W,WSi2,Si单层膜和W/Si,WSi2/Si多层膜应力

摘要

采用直流磁控溅射技术制备了厚度约100 nm的W,WSi2,Si单层膜和周期约为20 nm,Si膜层厚度与周期的比值为0.5的W/Si,WSi2/Si周期多层膜.利用台阶仪对镀膜前后基底表面的面形进行了测试,计算并比较了不同膜系的应力值.结果表明:W单层膜表现出较大的压应力,而W/Si周期膜则表现为张应力.WSi2单层膜和WSi2/Si周期多层膜均表现为压应力,没有应力突变,应力特性最为稳定.因此,WSi2/Si材料组合是研制大膜对数X射线多层膜较好的材料组合.%A series of W, WSi2, Si thin films and W/Si, WSi2/Si periodic multilayers were fabricated by using DC magnetron sputtering technology. Surface profiles before and after deposition were measured with a stylus profiler and the stresses were calculated. The results indicate that W thin films show relatively large compressive stress, while W/Si multilayers show tensile stress. Both WSi2 thin films and WSi2/Si periodic multilayers show compressive stress. WSi2/Si periodic multilayers have the most stable stress state with no sharp change, and is a good material combination for X-ray multilayer optics with a large number of bilayers.