使用SiC开关的两电平和三电平逆变器损耗与效率分析

摘要

针对使用碳化硅的两电平和三电平逆变器,首先阐述了逆变器的损耗组成及碳化硅材料的 MOSFET 和二极管的损耗计算方法;进而分析了两电平和三电平逆变器的导通规律及损耗计算方法;最后结合工程实际应用,从开关损耗、导通损耗、效率等方面对两电平和三电平逆变器进行比较.所得结论为两电平的导通损耗小,而三电平的开关损耗小,在开关频率较高的场合下三电平逆变器比两电平逆变器的总损耗小、效率高.%In allusion to the two-level inverter and three-level inverter both using SiC switches,this paper firstly states loss composition of inverters and calculation methods for losses of MOSFET and diode of SiC materials.Then it analyzes conduc-tion laws of these two kinds of inverters and calculation methods for losses.Finally,it compares switching losses,conduction losses,efficiencies and so on of these two kinds of inverters by combining with actual engineering application,and draws conclusions that conduction loss of the two-level inverter is small while the switching loss of the three-level inverter is smal-ler,the total loss of the three-level inverter is smaller than that of the two-level inverter and efficiency of the three-level in-verter is higher than that of the two-level inverter under the condition of higher switching frequency.