Design and fabrication of nano-ring MRAM demo devices based on spin-polarized current driving

摘要

Nano-ring-type magnetic tunnel junctions(NR-MTJ)were nano-fabricated.The tunneling magnetoresistance(TMR)versus current(Ⅰ)loops of the NR-MTJs for a spin-polarized current switching were measured and the TMR ratio of around 20%～50% with a Al-O barrier at room temperature were observed.The critical value of switching current for the free Co_(60)Fe_(20)B_(20) layer between parallel and anti-parallel magnetization states is smaller than 650μA.The NR-MTJs arrays were also integrated above the transistors in ...