2.4GHz 0.35-μm CMOS全集成线性功率放大器设计

摘要

Radio frequency amplifier which made in a SOC is an important unit of the RF front end. After analyzing and comparing the characteristic of various power amplifiers, the circuit brings up with a design of a 2.4GHz CMOS fully integrated linear power amplifier (PA) based on a SMIC 035-μm CMOS technology for WLAN system. The power amplifier which designed in this paper used the differential two-stage structure. The drive stage is made up of cascade class-A topology, a "big" MOSFET is used in the class-A output stage. The circuit performed simulation of the PA by Candence with the SMIC 0.35-μm RF CMOS model. According to the simulation results, with a supply voltage of 3.3V, the CMOS RF1C PA works steadily, the PA provides a 25dBm output power at IdB compression point, the out power of the PA reaches to 25.22dBm when the input power of is 0dBm.%片上系统射频功率放大器是射频前端的重要单元.通过分析和对比各类功率放大器的特点,电路采用SMIC0.35-μm CMOS工艺设计2.4 GHz WLAN全集成线性功率放大器.论文中设计的功率放大器采用不同结构的两级放大,驱动级采用共源共栅A类结构组成,输出级采用共源级大MOSFET管组成.电路采用SMIC 0.35-μm RF CMOS模型用Candence公司的spectreRF工具进行模拟.根据模拟结果,设计的CMOS射频功率放大器工作稳定,在3.3 V工作电压下,1 dB压缩点输出功率约为25 dBm,输入功率0 dBm时,输出功率为25.22 dBm.