多晶硅片表面缺陷的研究与定向凝固多晶硅锭热场模拟

摘要

结合实际工艺模拟多晶硅铸锭生产过程中的热场分布情况，研究了该热场对所生产多晶硅片缺陷分布的影响。同时采用对多晶硅片化学腐蚀抛光处理和位错刻蚀液处理之后的表面缺陷形貌表征的方法，以及观察扫描电镜（SEM）视角下其表面微结构，研究了采用定向凝固多晶硅锭工艺所得的多晶硅片表面缺陷情况。结果显示模拟该生产过程中热场分布情况对多晶硅片缺陷的影响和实验所得的结果相吻合。%Combining with the actual process, thermal field distribution was simulated in the process of polycrystalline silicon ingot, the influences of the thermal field on the defect distribution of polycrystalline silicon wafers were studied. At the same time, the surface morphology characterization of the polycrystalline silicon wafer after chemical etching polishing and the treatment of dislocation etching solution were adopted, the surface microstructure was observed by scanning electron microscope (SEM), and the surface defects of polycrystalline silicon wafers obtained by directional solidification of polycrystalline silicon ingot were studied. The results show that the thermal field distribution in the process of the production affect the defects of the polysilicon wafer and these are consistent with the experimental results.