电化学腐蚀MCP中载流子传输特性作用与影响分析

摘要

结合半导体能带理论以及电荷传递理论,阐述了电化学刻蚀硅微通道过程中的输运原理;在电化学腐蚀MCP以n-型（100）晶向单晶硅为研究对象,设计实验,找出硅片中载流子的最佳激发波长为850 nm,以磷离子注入工艺制备的欧姆接触层能产生更多的光生空穴,以微通道板几何结构建立模型,模拟微通道尖端结构对载流子的收集情况,发现载流子在尖端聚集,侧壁被钝化保护,使通道沿尖端方向生长,从而分析不同工艺条件对运输特性的作用与影响分析。%The transportation theory in the process of the electrochemical corrosion of the silicon micro channel is described by combing with the semiconductor energy band theory and charge transfer theory.Taking the n-type（100） mono-crystalline silicon wafer as the research object,the experiments are designed to find out that the optimal excitation wavelength of the carrier is 850 nm.The phosphorus ions are implanted into the ohms contact layer with the process preparation,which can produce more photon generated positive holes,the model is built in geometry to simulate the micro channel of the tip architecture for collecting the carrier.The carrier is gathered at the tip,the sidewall is passivated and the channel is grown along the tip.The effect of the different process conditions on transportation characteristics is analyzed.