N型背发射极晶体硅太阳电池模拟研究

摘要

In recent years, N-type crystalline silicon solar cells have attracted much attention in the field of high efficiency and low cost solar cell due to its great advantages, such as long minority carrier lifetime, low light-in⁃duced degradation and good low-light response. PC1D simulation is used to analyze the back emitter N-type crystal⁃line silicon solar cells. The results show that back emitter doping concentration, junction depth, back surface recom⁃bination velocity, front surface field doping concentration and front surface recombination velocity have a greater im⁃pact on the cell conversion efficiency, and especially the front and back surface recombination velocity are the most. But the front surface field doping depth has less affect on the performance of the cell. For the front surface recombi⁃nation, when the surface recombination velocity is less than 1×103 cm/s, there is a small affect on the performance of the cell, but when the surface recombination velocity is greater than 1×103 cm/s, the conversion efficiency of the cell decreases rapidly. The effects of back surface recombination on cell efficiency is even more obvious when the back surface recombination velocity is greater than 1 × 104 cm/s, the conversion efficiency of the cell arises a sharp de⁃cline. As the back surface recombination velocity increases to 1 × 106 cm/s, the efficiency of the cell drops to less than 5%. In a low back surface recombination velocity range (10~103 cm/s), the cell can obtain high conversion effi⁃ciency.%N型晶体太阳电池由于少子寿命高、光致衰减低、弱光响应好等优点，近年来在高效率低成本太阳电池领域一直备受关注。利用PC1D模拟，对N型背发射极晶体硅太阳电池进行了分析。结果表明，背发射极掺杂浓度、结深、背表面复合速率、前表面掺杂浓度及复合速率都对电池转换效率有较大影响，尤其是电池前表面与背表面复合速率对电池性能的影响最为明显，而电池前表面场掺杂深度则对电池性能影响较小。对于前表面复合来说，当前表面复合速率小于1×103 cm/s时，电池性能受表面复合速率变化的影响很小；但复合速率超过1×103 cm/s后，电池转换效率快速下降。背表面复合对电池效率影响则更明显，当背表面复合速率超过1×104 cm/s后，电池转换效率急剧下降，在背表面复合速率增大到1×106 cm/s时，电池效率下降到不足5%，而在电池背表面复合速度较小时（10~103 cm/s）则可获得较高的转换效率。