AC Impedance Spectroscopy of a-nc-Si:H Thin Films

摘要

The AC impedance of amorphous-nano-crystalline silicon composite thin films (a-nc-Si:H) from mHz to MHz at different temperatures has been studied. The samples were prepared by Plasma Enhanced Chemical Vapor Deposition technique. The X-ray diffraction and high resolution electron microscopy showed that films consist of isolated nano-crystals embedded in amorphous matrix. In analysis of impedance data, two approaches were tested: the ideal Deby type equivalent circuit and modified one, with CPE (constant phase elements). It was found that the later better fits to results. The amorphous matrix showed larger resistance and lower capacity than nano-crystals. By heat treatment in vacuum, the capacity for both phases changes, according to expected change in size of ordered domains.