单源进液金属有机化学气相沉积法工作气压对YBCO薄膜制备的影响研究

摘要

基于金属有机化学气相沉积法(MOCVD),在沉积有Y2O3/YSZ/ CeO2( YYC)多层过渡层的Ni - W_at.5％金属基带上沉积YBa2Cu3O7-x(YBCO)超导薄膜.通过对单源进液系统的优化,使金属有机源连续稳定地输送到蒸发皿进行闪蒸.优化总气压并通入N2O气氛,以获得高质量的YBCO薄膜.在优化的温度条件下,总压为380Pa,氧气和N2O分压为200Pa(氧气、笑气流量比为5:3),获得了较高的临界电流密度Jc=0.2MA/cm2.在延续织构方面,由CeO2的面外半高宽3.6.降到YBCO(005)峰半高宽的1.8.,由CeO2的面内半高宽5.2.降到YBCO( 103)面半高宽的4.8.,织构获得较大改善.%In this paper,YBa2Cu3O7-x superconducting thin films were deposited on the Y2O3/YSZ/CeO2( YYC)buffered Ni - W_at 5% films by Metal Organic Chemical Vapor Deposition(MOCVD). Optimized single source liquid delivering equipment was used for continuous and stable supply of the metal organic source. With the total gas pressure of 380Pa,O2 and N20 partial pressure of 200Pa, high quality YBCO film was obitained and its critical current density Jc reached 0. 2MA/cm2. Compared to the FWHM values of out - of - plane and in - plane of CeO2 and subsquent YBCO, YBCO films were significantly improved .