SiGe Optical Waveguide Modulators Based on the Plasma Dispersion Effect

摘要

Based on plasma dispersion of Si_(1-x)Ge_(x),the single mode waveguide modulators consisting of Si_(1-x)Ge_(x)/Si and Si/Si_(1-x)Ge_(x)/Si which were grown by molecular beam epitaxy have been fabricated.For Si_(1-x)Ge_(x)/Si structure,the switch current and insertion loss at wavelength 1.3 fiin are 36 mA and 2.8 dB,respectively.The switching response time is 40 ns.