首页> 外文期刊>中国物理快报:英文版 >Polarity Reversal of Terahertz Electric Field from Heavily p-Doped Silicon Surfaces
【24h】

Polarity Reversal of Terahertz Electric Field from Heavily p-Doped Silicon Surfaces

机译:大型P掺杂硅表面的太赫兹电场极性逆转

获取原文
获取原文并翻译 | 示例
           

著录项

  • 来源
    《中国物理快报:英文版》 |2021年第7期|54-59|共6页
  • 作者单位

    College of Liberal Arts and Sciences National University of Defense Technology Changsha 410073 China;

    College of Liberal Arts and Sciences National University of Defense Technology Changsha 410073 China;

    Graduate School of China Academic of Engineering Physics Beijing 100193 China;

    Northwest Institute of Nuclear Technology Xi'an 710024 China;

    College of Liberal Arts and Sciences National University of Defense Technology Changsha 410073 China;

    College of Liberal Arts and Sciences National University of Defense Technology Changsha 410073 China;

    College of Liberal Arts and Sciences National University of Defense Technology Changsha 410073 China;

    College of Liberal Arts and Sciences National University of Defense Technology Changsha 410073 China;

    College of Liberal Arts and Sciences National University of Defense Technology Changsha 410073 China;

    College of Liberal Arts and Sciences National University of Defense Technology Changsha 410073 China;

    College of Liberal Arts and Sciences National University of Defense Technology Changsha 410073 China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号