首页> 中文期刊> 《中国物理快报:英文版》 >Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress

Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress

         

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  • 来源
    《中国物理快报:英文版》 |2014年第12期|82-84|共3页
  • 作者单位

    Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011;

    Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011;

    University of Chinese Academy of Sciences, Beijing 100049;

    Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011;

    Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011;

    Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011;

    Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011;

    Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011;

    Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011;

    Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011;

    Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011;

    University of Chinese Academy of Sciences, Beijing 100049;

    Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011;

    Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011;

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  • 正文语种 eng
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