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首页> 中文期刊> 《中国物理快报：英文版》 >Weak Anti-Localization and Quantum Oscillations in Topological Crystalline Insulator PbTe

Weak Anti-Localization and Quantum Oscillations in Topological Crystalline Insulator PbTe

         
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摘要

Topological crystalline insulators (TCIs) have attracted worldwide interest since their theoretical predication and have created exciting opportunities for studying topological quantum physics and for exploring spintronic applications.In this work,we successfully synthesize Pb Te nanowires via the chemical vapor deposition method and demonstrate the existence of topological surface states by their 2D weak anti-localization effect and Shubnikov-de Haas oscillations.More importantly,the surface state contributes ～61％o of the total conduction,suggesting dominant surface transport in Pb Te nanowires at low temperatures.Our work provides an experimental groundwork for researching TCIs and is a step forward for the applications of Pb Te nanowires in spintronic devices.

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  • 来源
    《中国物理快报：英文版》 |2017年第2期|67-70|共4页
  • 作者

    Ke-Jie Wang; Yu-Jie Liu; Xue-Feng Wang; Feng-Qiu Wang; Liang He; Yong-Bing Xu; Rong Zhang; Wei Wang; Min-Hao Zhang; Xiao-Qian Zhang; Pei Yang; Bo Liu; Ming Gao; Da-Wei Huang; Jun-Ran Zhang;

  • 作者单位

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Jiangsu Provincial Key Laboratory for Nanotechnology, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

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  • 正文语种 eng
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