首页> 中文期刊> 《中国物理:英文版》 >High performance silicon-based GeSn p-i-n photodetectors for short-wave infrared application

High performance silicon-based GeSn p-i-n photodetectors for short-wave infrared application

         

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  • 来源
    《中国物理:英文版》 |2019年第12期|410-415|共6页
  • 作者单位

    State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China;

    Center of Materials Science and Opto-Electronic Engineering University of Chinese Academy of Sciences Beijing 100049 China;

    School of Science Minzu University of China Beijing 100081 China;

    Optoelectronics Research Center Minzu University of China Beijing 100081 China;

  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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