Improving robustness of GGNMOS with P-base layer for electrostatic discharge protection in 0.5-μm BCD process

著录项

• 来源
  《中国物理：英文版》 |2019年第8期|393-396|共4页
• 作者

  Fei Hou; Ruibo Chen; Feibo Du; Jizhi Liu; Zhiwei Liu; Juin J Liou;

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• 作者单位

  State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China;

  School of Information Engineering Zhengzhou University Zhengzhou 450001 China;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词