Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiplequantum wells on silicon

摘要

Strain-compensated Ge/Si0.15Ge0.s5 multiple quantum wells were grown on an Si0.1Ge0.9 virtual substrate using ultrahigh vacuum chemical vapor deposition technology on an n+-Si(001) substrate.Photoluminescence measurements were performed at room temperature,and the quantum confinement effect of the direct-bandgap transitions of a Ge quantum well was observed,which is in good agreement with the calculated results.The luminescence mechanism was discussed by recombination rate analysis and the temperature dependence of the luminescence spectrum.