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L10 FePt thin films with 001 crystalline growth fabricated by ZnO addition and rapid thermal annealing

         

摘要

FePt films with a high degree of order S of the Ll0 structure (S > 0.90) and well defined [001] crystalline growth perpendicular to the film plane are fabricated on thermally oxidized Si substrates by the addition of ZnO and a successive rapid thermal annealing (RTA) process.The optimum condition to prepare high-ordering L10 FePtZnO films is 20 vol% ZnO addition and 450 ℃ annealing.The effect of the ZnO additive on the ordering process of the L10 FePtZnO films is discussed.In the annealing process,Zn atoms move to the film surface and evaporate.The motion of the Zn atoms accelerates the intergrain exchange and decreases the ordering temperature.

著录项

  • 来源
    《中国物理:英文版》 |2013年第8期|627-631|共5页
  • 作者

    Liu Xi; Ishio Shunji;

  • 作者单位

    Key Laboratory of Ministry of Education for Opto-Electronic Technology and Intelligent Control,Lanzhou Jiaotong University, Lanzhou 730070, China;

    Department of Materials Science and Engineering, Akita University, Tegata Gakuen-machi, Akita 010-8502, Japan;

    Venture Business Laboratory, Akita University, Tegata Gakuen-machi, Akita 010-8502, Japan;

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  • 正文语种 eng
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