机译:Al / Al2O3 / ZnO / n-GaAs MOS电容器的界面特性
School of Microelectronics,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071,China;
School of Microelectronics,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071,China;
School of Microelectronics,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071,China;
School of Microelectronics,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071,China;