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Electronic structure of O-doped SiGe calculated by DFT + U method

         

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  • 来源
    《中国物理:英文版》 |2016年第12期|377-389|共13页
  • 作者单位

    Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China;

    Yunnan Key Laboratory of Micro/Nano Materials & Technology, School of Materials Science and Engineering,Yunnan University, Kunming 650504, China;

    Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials(Ministry of Education),Yunnan Normal University, Kunming 650092, China;

    Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials(Ministry of Education),Yunnan Normal University, Kunming 650092, China;

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