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4.3 THz quantum-well photodetectors with high detection sensitivity

         

摘要

We demonstrate a high performance GaAs/AlGaAs-based quantum-well photodetector (QWP) device with a peak response frequency of 4.3 THz.The negative differential resistance (NDR) phenomenon is found in the dark currentvoltage (Ⅰ-Ⅴ) curve in the current sweeping measurement mode,from which the breakdown voltage is determined.The photocurrent spectra and blackbody current responsivities at different voltages are measured.Based on the experimental data,the peak responsivity of 0.3 A/W (at 0.15 V,8 K) is derived,and the detection sensitivity is higher than 1011 Jones,which is in the similar level as that of the commercialized liquid-helium-cooled silicon bolometers.We attribute the high detection performance of the device to the small ohmic contact resistance of ~ 2 Ω and the big breakdown bias.

著录项

  • 来源
    《中国物理:英文版》 |2018年第3期|201-204|共4页
  • 作者单位

    Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    University of Chinese Academy of Sciences, Beijing 100049, China;

    Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    Ministry of Education and Shanghai Key Laboratory of Modern Optical System and Shanghai Terahertz Research Center, University of Shanghai for Science and Technology, Shanghai 200093, China;

    Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

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  • 正文语种 eng
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