MEMS悬浮结构深反应离子刻蚀保护方法对比研究

摘要

分别对基于硅玻键合与硅硅键合的MEMS加工工艺中悬浮结构深反应离子刻蚀保护方法进行对比研究，获得最佳结构刻蚀保护方法。基于硅玻键合工艺的最佳刻蚀保护方法：在结构层背面溅射金属作为保护层；基于硅硅键合工艺的最佳刻蚀保护方法：将结构刻通区域衬底硅暴露及结构层背面制作图形化的SiO2保护层相结合的方式保护。结构保护后，经长时间过刻蚀，结构依然完整无损。%The protection methods for MEMS suspended structure deep reactive ion etching based on silicon-glass bonding and silicon direct bonding are studied in comparison experiments. The best protection method for process based on silicon-glass bonding is to sputter a metal layer on the backside of the structure. For the process based on silicon direct bonding,the best method is to combine the following two methods of exposing the silicon substrate un⁃der the etching through area and using graphed silicon oxide as protection layer. The structure is still excellent after long time overetch by the protection process.