首页> 中文期刊> 《中国稀土学报:英文版》 >Influence of Ambient Gas and Oxygen Pressure on Nd∶LuVO_4 Films Grown by Pulsed Laser Deposition

Influence of Ambient Gas and Oxygen Pressure on Nd∶LuVO_4 Films Grown by Pulsed Laser Deposition

         

摘要

The (200) dominated (Nd∶LuVO4) films were fabricated successfully on polished SiO2 under different ambient gases and different oxygen pressures. By XRD, it is shown that a film with good crystallization is deposited under oxygen and the optimal pressure is 20 Pa. The surface morphology of (Nd∶LuVO4) films was observed by AFM, and it is found that oxygen pressure influences the surface morphology of (Nd∶LuVO4) films. The ratio of content of (Nd∶LuVO4) films was estimated according to the yields of Lu and V by using RBS spectra, this ratio is in good agreement with the target composition. The effective index refractive of every mode is 2.0044, 17098, measured by prism coupler method.

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