Cu掺杂ZnO纳米材料的制备及表征

摘要

利用CuO作为前驱体对ZnO进行了Cu掺杂研究,分别在不同温度下获得了ZnO纳米带及有纳米带构成的微米花状结构,对其生长机理进行了分析.并且以Cu片为衬底获得了ZnO的纳米梳以及有纳米梳构成的多层结构ZnO.XRD表明产物中只有ZnO单质相的存在,EDS证明产物中存在Cu元素.ZnO室温下的PL谱表明其UV与深能级发射强度比随Cu掺杂量的增加而变大,说明Cu的掺杂能够降低ZnO的缺陷峰强度.%Cu-doped ZnO samples were prepared by CVD under different growth temperature, and their growth mechanism was analyzed. The samples were characterized by X-ray diffraction patterns, SEM, and PL spectra. XRD patterns confirm that the samples are polycrystal and show single ZnO hexagonal phase. EDS analysis proved that Cu is doped in ZnO samples. Room temperature PL spectra indicate that the intensity ratio of UV to deep energy level emission increases with Cu content in ZnO, which implies the introduction of Cu causes the decreases in the emission related to defects.