Ultra-thin Body Buried In_(0.35)Ga_(0.65)As Channel MOSFETs with Extremely Low Off-current on Si Substrates

摘要

In this paper, we investigated the electrical properties of the Metal-oxide-semiconductor gate stack of Ti/Al_(2)O_(3)/In P under different annealing conditions. A minimum interface trap density of 3×10^(11) cm^(-2) eV^(-1) is obtained without postmetallization annealing treatment.Additionally, utilizing Ti/Al_(2)O_(3)/In P MOS gate stack,we fabricated ultra-thin body buried In0.35 Ga0.65 As channel MOSFETs on Si substrates with optimized on/off trade-off. The 200 nm gate length device with extremely low off-current of 0.6 n A/μm, and on-off ratio of 3.3×10^(5), is demonstrated by employing buried low indium(In_(0.35) Ga_(0.65) As) channel with In P barrier/spacer device structure, giving strong potential for future highperformance and low-power applications.