化学气相沉积法控制合成单层MoSe2薄膜

摘要

To acquire high crystalline quality monolayer two-dimensional transition metal dichalcogenides (2D-TMDCs) nanosheets with optimized processing parameters, up to now, is the prerequisite for fundamental studies and applications.Monolayer MoSe2 nanosheets were synthesized by continuously optimizing the experimental parameters in the chemical vapor deposition (CVD) growth process.Moreover, Raman spectrum and photoluminescence (PL) spectrum were measured to confirm the thickness and bandgap of as-grown samples.Extensive experimental results showed that the initial pressure of the experiment and the distance between the substrate and the precursor influenced the growth quality of the sample when monolayer MoSe2 films were prepared by the CVD method.The influence on the growth of monolayer MoSe2 films was further investigated by contrast tests.Eventually, the optimum pressure and the distance between the substrate and the precursor were obtained.%为了寻找最优化的实验条件得到大面积且高晶体质量的二维过渡金属硫族化合物(two-dimensional transition metal dichalcogenides,2DTMDCs)薄膜材料,选择用化学气相沉积(chemical vapor deposition,CVD)法,通过不断优化实验参量,制备出了单层MoSe2薄膜,并利用Raman光谱及光致发光光谱对样品的层数和带隙宽度进行表征.通过大量实验发现,在用CVD法制备单层MoSe2薄膜时,实验的初始压强及衬底与前驱体的距离会影响样品的生长.于是通过对比实验,探究了起始压强及衬底与前驱体的距离对单层MoSe2薄膜生长的影响.得到了最优化的压强及衬底与前驱体的距离.