烧结温度对SiO2-TiO2薄膜亲水性的影响

摘要

为了确定SiO2-TiO2薄膜制备过程的最佳烧结温度,将不同SiO2与TiO2掺杂比的样品分别在400℃和500℃下煅烧,进行与水的静态接触角测试.结果表明,在一定掺杂比范围内,SiO2的掺杂能明显提高TiO2表面亲水性,并且500℃煅烧的产品亲水性要好于400℃煅烧的产品.SEM和XRD表明,500℃煅烧的产品表面颗粒粒径要大于400℃煅烧的产品的表面颗粒粒径,并且已有了比较明显的锐钛矿晶型特征峰,而400℃煅烧的产品还是无定形态,这说明SiO2的掺杂抑制了TiO2晶粒的生长和晶型的转变.而锐钛矿晶型的TiO2亲水性要远好于无定形的TiO2,致使500 ℃煅烧的产品的亲水性要好于400 ℃煅烧的产品的亲水性,因此500℃才是SiO2 -TiO2薄膜的最佳烧结温度.%In order to determine the optimum heat temperature of SiO2 -TiO2 film preparation course, we calcined different SiO2 doping TiO2 samples under 400℃ or 500℃ using muffle furnace, and then the behaviour of these films were checked by contact angle testing. The results, showed that within certain doping range, the hydrophilic behavior of samples doped SiO2 have obvious improvement, and within that range the hydrophilic behavior of samples calcined under 500 ℃ is better than that of samples calcined under 400 Tl. SEM and XRD indicated that: the particle diameter of samples calcined under 500 ℃ is bigger, and samples have anatase propertises, while samples calcined under 400℃ have amorphism feature. SiO2 doping has inhibited growth of TiO2 crystal particle and transform of TiO2 crystal form. The hydrophilic behavior of anatase crystal form is much better than that of amorphism, so 500 ℃ is the optimum temperature of SiO2-TiO2 film preparation course.