首页> 中文期刊> 《近代物理研究所和兰州重离子加速器实验室年报:英文版》 >3-1 Transmission Electron Microscopy Investigations of Bubble Formation in Grain Boundaries of He-implanted Polycrystalline SiC

3-1 Transmission Electron Microscopy Investigations of Bubble Formation in Grain Boundaries of He-implanted Polycrystalline SiC

         

摘要

Because of the low cross-section for neutron capture and its excellent structural, chemical and mechanical stability, silicon carbide (SiC) is an important material with application in the development of nuclear energy and waste technologies. For example, in the fourth generation of fission reactors, such as high-temperature gas-cooled reactors and gas-cooled fast reactors, TRISO-coated particle fuel is designed, because this fuel is very robust with no failures anticipated during irradiation and under accident conditions.

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