ANN-Based Identification of Steady-State Behavior Parameters of Composite Power Semiconductor Device Model

摘要

1　Ｉｎｔｒｏｄｕｃｔｉｏｎ　Ｉｎｒｅｃｅｎｔｙｅａｒｓ,ｍａｎｙｎｅｗｐｏｗｅｒｓｗｉｔｃｈｉｎｇｓｅｍｉｃｏｎｄｕｃｔｏｒｓｈａｖｅｅｍｅｒｇｅｄｄｕｅｔｏｔｈｅｒａｐｉｄｄｅｖｅｌｏｐｍｅｎｔｏｆｐｏｗｅｒｅｌｅｃｔｒｏｎｉｃｓ.Ｉｔｉｓｎｏｔｓｔｒａｎｇｅｔｈａｔｔｈｅｍｏｄｅｌｏｆａｎｅｗｌｙｄｅｖｅｌｏｐｅｄｄｅｖｉｃｅｃａｎｎｏｔｂｅｆｏｕｎｄｉｎｔｈｅｌｉｂｒａｒｙｏｆａｃｉｒｃｕｉｔｓｉｍｕｌａｔｏｒ.Ｔｈｅｕｓｅｒｓｈａｖｅｔｏｅｓｔａｂｌｉｓｈｔｈｅｓｉｍｕｌａｔｉｏｎｍｏｄｅｌｂｙｔｈｅｍｓｅｌｖｅｓ.Ｔｈｅｒｅａｒｅｓｅｖｅｒａｌｗａｙｓｉｎｃｏｎｓｔｒｕｃｔｉｎｇｓｉｍｕｌａｔｉｏｎｍｏｄｅｌｆｏｒａｐｏｗｅｒｄｅｖｉｃｅ.Ｔｈｅｃｏｍｐｏｓｉｔｅｍｏｄｅｌｍｅｔｈｏｄ,ｄｕｅｔｏｉｔｓｅａｓｉｎｅｓｓａｎｄｖｅｒａｃｉｔｙ,ｉｓｍｏｓｔｓｕｉｔａｂｌｅａｎｄａｔｔｒａｃｔｉｖｅｔｏｔｈｅｃｉｒｃｕｉｔｄｅｓｉｇｎｅｒｓ[1].Ｕｓｉｎｇｔｈｉｓｍｅｔｈｏｄ,ｔｈｅｃｉｒｃｕｉｔｓｉｍｕｌａｔｉｏｎｍｏｄｅｌｏｆａｐｏｗｅｒｄｅｖｉｃｅｉｓｍａｄｅｕｐｏｆｓｅｖｅｒａｌｏｔｈｅｒｃ...