工作压强对硅掺杂辉光放电聚合物结构和性能的影响

摘要

The Si-doped glow discharge polymer (Si-GDP) films are deposited by glow discharge polymerization technology at different pressures. The structure and the composition of eath Si-doped glow discharge polymer film are characterized by the Fourier transform infrared spectroscopy and x-ray photoelectron. Using ultraviolet/visible spectroscopy, the optical band gap is analyzed. The results show that the Si element exists mainly in the form of Si-C, Si-H, Si-O, Si-CH3. The relative content of Si-C decreases and then increases with the increase of pressure. It can be found that the ratio between C-C and C =C decreases with the increase of pressure. As the pressure increases, the optical band-gap decreases and then increases.%采用辉光放电聚合技术,在不同工作压强条件下制备了掺硅的辉光放电聚合物(Si-GDP)薄膜.并采用傅里叶变换红外吸收光谱和X射线光电子能谱(XPS)对Si-GDP薄膜进行了表征,分析了压强变化对其内部结构及成分的影响.利用紫外-可见光谱对Si-GDP薄膜的光学带隙进行了分析.结果表明:Si-GDP薄膜中Si元素主要以Si-C,Si-H,Si-O,Si-CH3的键合形式存在;随着工作压强的增大,薄膜中Si-C键相对含量先减小后增加;从Si-GDP薄膜的XPS分析可以发现,C-C与C=C含量相对比值随压强的增大而减小.光学带隙的宽度也随压强的增大先减小后增加.