氮对金刚石缺陷发光的影响∗

摘要

利用低温显微荧光光谱研究了IIa型、Ib型、Ia型金刚石的缺陷发光性质.研究发现，随着氮含量增加，间隙原子及空位逐渐被氮原子所束缚，从而使得GR1中心、533.5 nm及580 nm中心等本征缺陷发光减弱，而氮-空位复合缺陷(NV中心)及523.7 nm中心等氮相关缺陷发光增强.高温退火后，间隙原子与空位可以自由移动， IIa型金刚石中出现了NV0中心， Ib型金刚石中只剩下了NV中心， Ia型金刚石中氮原子之间发生团聚，出现了H3中心及N3中心.另外，氮作为施主原子，有利于负电荷缺陷的形成，如3H中心、NV−中心.%The defect luminescences of types IIa, Ib and Ia diamond are investigated by the low-temperature micro-photoluminescence microspectroscopy. The results show that with the increase of nitrogen content, the interstitials and vacancies are trapped by the nitrogen atoms, then the luminescences of intrinsic defects such as GR1, 533.5 nm and 580 nm centers are weakened, while the emissions of nitrogen-related such as NV and 523.7 nm centers are strengthened. After high temperature annealing, the interstitials and vacancies in diamond become movable. The NV0 center is found in the IIa diamond, and the type Ib diamond presents the only strong NV luminescence. The H3 and N3 centers are observed due to the aggregation of nitrogen in Ia diamond. In addition, the nitrogen benefits the formations of the negative defects (3H center, NV− center) as the donor atom.