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Adsorption of Benzyl Viologen and Polyethylene Glycol and their Displacement by 3-Mercapto-1 Propanesulfonate During Copper Electrodeposition

机译:铜电沉积过程中苄基紫精和聚乙二醇的吸附及其3-巯基-1丙磺酸盐的置换

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摘要

The fabrication of on-chip interconnects in the semi-conductor industry employs electrodeposition of copper for fabrication of lines and vertical interconnects (vias) on scales as small as a few tens of nanometers. A significant challenge is to control the distribution of current to assure void-free bottom up filling of these features, a process commonly referred to as superfilling. The presence of a combination of additives on the copper surface regulates the copper deposition rate, and in the proper concentrations produce a high deposition rate at the bottom of features and a reduced deposition rate on the planar wafer surface and upper side-walls of the features. It is known that the adsorption of the additives results in superfilling. However, there are few direct measurements of the coverage of the respective adsorbates and limited information is available for the surface chemistry of additives at various concentrations. The present study is built on the competitive adsorption model in which adsorbed benzyl viologen (BV) or polyethylene glycol (PEG) are displaced progressively from the interface by 3-mercapto-1-propane sulfonic acid (MPS) adsorption during copper electrodeposition. Adsorption of BV and interactions between BV and MPS as well as PEG and MPS were explored by chronoamperometry.;During copper electrodeposition with simultaneous BV adsorption, the fractional surface coverage of BV was shown to be potential and temperature dependent. By fitting the data to the Langmuir model, it was shown the adsorption of BV on the copper electrode surface is a spontaneous exothermic process.;During copper electrodeposition with displacement of BV by MPS, increased MPS concentration in the electrolyte increases the driving force for MPS adsorption and BV desorption. This potential and temperature dependent displacement was shown to be a spontaneous endothermic process.;During copper electrodeposition with displacement of PEG by MPS, more negative potential, higher MPS concentration and higher temperature promotes MPS adsorption and desorption of PEG. Displacement of PEG by MPS was shown to be a spontaneous endothermic process.
机译:半导体工业中的片上互连的制造采用铜的电沉积来制造线路和垂直互连(通孔),其尺寸可小至几十纳米。一个巨大的挑战是控制电流的分布,以确保这些特征的无空隙的自底向上填充,这一过程通常称为超级填充。铜表面上添加剂组合的存在可调节铜的沉积速率,并以适当的浓度在特征的底部产生高沉积速率,并在平面晶片表面和特征的上侧壁上降低沉积速率。已知添加剂的吸附导致超填充。但是,几乎没有直接测量相应吸附物覆盖率的信息,并且对于各种浓度的添加剂的表面化学信息有限。本研究建立在竞争性吸附模型的基础上,其中在铜电沉积过程中,通过3-巯基-1-丙烷磺酸(MPS)吸附,吸附的苄基紫精(BV)或聚乙二醇(PEG)从界面逐渐位移。通过计时安培法研究了BV的吸附以及BV与MPS以及PEG和MPS之间的相互作用。在同时进行BV吸附的铜电沉积过程中,BV的部分表面覆盖率与电势和温度有关。通过将数据拟合到Langmuir模型,表明BV在铜电极表面的吸附是自发的放热过程;;在铜电沉积中MPS置换BV时,电解液中MPS浓度的增加会增加MPS的驱动力吸附和BV解吸。该电势和温度相关的位移被证明是自发的吸热过程。在铜电沉积中MPS取代PEG时,更多的负电势,更高的MPS浓度和更高的温度会促进MPS对PEG的吸附和解吸。 MPS取代PEG是自发的吸热过程。

著录项

  • 作者

    Lu, Jing.;

  • 作者单位

    University of New Hampshire.;

  • 授予单位 University of New Hampshire.;
  • 学科 Chemical engineering.
  • 学位 Ph.D.
  • 年度 2017
  • 页码 100 p.
  • 总页数 100
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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