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MOCVD growth and optical properties of gallium arsenide antimonide/indium gallium arsenide and gallium arsenide antimonide/indium phosphide heterostructures

机译：砷化镓锑苷/铟砷化镓和砷化镓锑/铟磷化镓锑/磷化铟异质结构的MOCVD生长和光学性质

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作者
Hu, Jinsheng;
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作者单位

Simon Fraser University (Canada);

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授予单位 Simon Fraser University (Canada);
学科
学位 Ph.D.
年度 1999
页码 117 p.
总页数 117
原文格式 PDF
正文语种 eng
中图分类 AAINQ51872;
关键词
Gallium arsenic antimonide; Indium gallium arsenide; Indium phosphide; MOCVD; Semiconductor heterostructures;

机译：砷化镓锑酸酯;铟镓砷;磷化铟;MOCVD;半导体异质结构;

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1. An energetic study on the formation of self-assembled indium arsenide nanostructures grown on indium gallium arsenide/indium phosphide and gallium arsenide substrates [J] . F Shi, Kuo-Lih Chang, K C Hsieh Proceedings of the Institution of Mechanical Engineers, Part N: Journal of Nanoengineering and Nanosystems . 2007,第1期

机译：在砷化铟镓/磷化铟和砷化镓衬底上生长的自组装砷化铟纳米结构形成的有力研究
2. Enhanced indium phosphide substrate protection for liquid phase epitaxy growth of indium‐gallium‐arsenide‐phosphide double heterostructure lasers [J] . Journal of Applied Physics . 1983,第2期

机译：增强的磷化铟衬底保护层，用于铟镓镓砷化物磷化双异质结构激光器的液相外延生长
3. Physics-based simulation study of high-performance gallium arsenide phosphide–indium gallium arsenide tunnel field-effect transistor [J] . Bhagwan Ram Raad, Dheeraj Sharma, Kaushal Nigam, Micro & Nano Letters, IET . 2016,第7期

机译：高性能砷化镓磷化物-砷化铟镓隧道场效应晶体管的基于物理的仿真研究
4. Improved efficiency of photovoltaic cell based on indium-phosphide-oxide, indium-phosphide, indium-gallium arsenide and indium-gallium-antimonide [C] . Barua Soumen, Abdulla-Al-Galib Mir, Salam K. M. A., 2012 2nd International Conference on Developments in Renewable Energy Technology . 2012

机译：基于磷化铟氧化物，磷化铟，砷化铟镓镓和锑化铟镓镓的光伏电池效率的提高
5. Heterostructures interface effects on the far-infrared magneto-optical spectra of indium arsenide/gallium antimonide quantum wells. [D] . Comanescu, Gelu. 2003

机译：异质结构界面对砷化铟/锑化镓量子阱的远红外磁光光谱的影响。
6. Cobalt in hard metals and cobalt sulfate gallium arsenide indium phosphide and vanadium pentoxide. [O] . -1

机译：硬金属中的钴和硫酸钴砷化镓磷化铟和五氧化二钒。
7. Optical properties of gallium arsenide/aluminum gallium arsenide and gallium aluminum indium arsenide/indium aluminum arsenide multiple quantum well and superlattice structures grown by molecular beam epitaxy. [O] . Pon Russell Michael. 1991

机译：分子束外延生长的砷化镓/铝砷化镓和砷化镓铝铟/砷化铝铝的多量子阱和超晶格结构的光学性质。

MOCVD growth and optical properties of gallium arsenide antimonide/indium gallium arsenide and gallium arsenide antimonide/indium phosphide heterostructures

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