Effects of nanocrystalline silicon inclusions in doped and undoped thin films of hydrogenated amorphous silicon.

摘要

Hydrogenated amorphous silicon has attracted considerable interest as a low-cost material for various large-area electronic devices, such as scanners, thin film transistors employed in flat panel displays, and photovoltaic devices. A major limitation of amorphous silicon is a light-induced degradation of the photoconductivity and dark conductivity, associated with the creation of metastable dangling bond defects. Recent reports that mixed phase thin films, consisting of silicon nanocrystallites embedded within a hydrogenated amorphous silicon matrix, display a resistance to this light-induced degradation have motivated the development of a novel deposition system to synthesize such materials. Conventional techniques to generate such amorphous/nanocrystalline mixed phase films involve running a Plasma Enhanced Chemical Vapor Deposition system very far from those conditions that yield high quality amorphous silicon. A dual-plasma co-deposition system has thus been constructed, whereby the silicon nanoparticles can be fabricated in one chamber, and then injected into a second plasma reactor, in which the surrounding amorphous silicon is deposited. The deposition process, as well as structural, optical, and electronic characterization of these films, including the dark conductivity, photoconductivity, infra-red absorption spectra, micro-RAMAN spectra, and the optical absorption spectra, will be discussed for these films.