首页> 外文学位 >High -precision correlation of fundamental material parameters for bulk indium gallium arsenide on indium phosphide and indium gallium arsenide HEMT structures using photoluminescence, x-ray diffraction, photoreflectance, and Raman spectroscopy

【24h】

High -precision correlation of fundamental material parameters for bulk indium gallium arsenide on indium phosphide and indium gallium arsenide HEMT structures using photoluminescence, x-ray diffraction, photoreflectance, and Raman spectroscopy

机译：使用光致发光，x射线衍射，光反射和拉曼光谱法，对磷化铟和砷化铟镓HEMT结构上的块状砷化铟镓的基本材料参数进行高精度关联

获取原文

获取原文并翻译 | 示例

页面导航

著录项
相似文献
相关主题

著录项

作者
Estrera, Joseph Paul;
展开▼
作者单位

The University of Texas at Dallas;

展开▼
授予单位 The University of Texas at Dallas;
学科
学位 Ph.D.
年度 1992
页码 242 p.
总页数 242
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. An energetic study on the formation of self-assembled indium arsenide nanostructures grown on indium gallium arsenide/indium phosphide and gallium arsenide substrates [J] . F Shi, Kuo-Lih Chang, K C Hsieh Proceedings of the Institution of Mechanical Engineers, Part N: Journal of Nanoengineering and Nanosystems . 2007,第1期

机译：在砷化铟镓/磷化铟和砷化镓衬底上生长的自组装砷化铟纳米结构形成的有力研究
2. Enhanced indium phosphide substrate protection for liquid phase epitaxy growth of indium‐gallium‐arsenide‐phosphide double heterostructure lasers [J] . Journal of Applied Physics . 1983,第2期

机译：增强的磷化铟衬底保护层，用于铟镓镓砷化物磷化双异质结构激光器的液相外延生长
3. Physics-based simulation study of high-performance gallium arsenide phosphide–indium gallium arsenide tunnel field-effect transistor [J] . Bhagwan Ram Raad, Dheeraj Sharma, Kaushal Nigam, Micro & Nano Letters, IET . 2016,第7期

机译：高性能砷化镓磷化物-砷化铟镓隧道场效应晶体管的基于物理的仿真研究
4. Improved efficiency of photovoltaic cell based on indium-phosphide-oxide, indium-phosphide, indium-gallium arsenide and indium-gallium-antimonide [C] . Barua Soumen, Abdulla-Al-Galib Mir, Salam K. M. A., 2012 2nd International Conference on Developments in Renewable Energy Technology . 2012

机译：基于磷化铟氧化物，磷化铟，砷化铟镓镓和锑化铟镓镓的光伏电池效率的提高
5. Studies of indium aluminum arsenide/indium gallium arsenide and gallium indium phosphide/gallium arsenide heterostructure FET's for high-speed applications. [D] . Chan, Yi-Jen. 1992

机译：用于高速应用的砷化铟铝/砷化铟镓和磷化镓铟/砷化镓异质结构FET的研究。
6. Cobalt in hard metals and cobalt sulfate gallium arsenide indium phosphide and vanadium pentoxide. [O] . -1

机译：硬金属中的钴和硫酸钴砷化镓磷化铟和五氧化二钒。
7. Optical properties of gallium arsenide/aluminum gallium arsenide and gallium aluminum indium arsenide/indium aluminum arsenide multiple quantum well and superlattice structures grown by molecular beam epitaxy. [O] . Pon Russell Michael. 1991

机译：分子束外延生长的砷化镓/铝砷化镓和砷化镓铝铟/砷化铝铝的多量子阱和超晶格结构的光学性质。
8. Theoretical Studies of High Energy Transport of Electrons and Holes in Gallium Arsenide, Indium Phosphide, Indium Arsenide, and Gallium Antimonide. [R] . Brennan, K. F. 1984

机译：砷化镓，磷化铟，砷化铟和锑化镓中电子和空穴高能迁移的理论研究。

High -precision correlation of fundamental material parameters for bulk indium gallium arsenide on indium phosphide and indium gallium arsenide HEMT structures using photoluminescence, x-ray diffraction, photoreflectance, and Raman spectroscopy

著录项

相似文献

相关主题

期刊订阅