Carbon naotubes and graphene have been a trending research topic in the past decade. These graphitic compounds exhibit numerous advantageous properties (electronic, mechanical, thermal, optical, etc) which industry and researchers alike are excited to take advantage of. Beyond the challenges of yield and controlled growth, there are a number of standing questions which govern some of the more fundamental characteristics of these materials: What role do lattice defects play in the adsorption of gas molecules on the surface of carbon nanotubes? How are the electronic states of the carbon nanotubes influenced by these adsorbed molecules? And how can we develop models to predict useful applications of this knowledge?;In order to address these questions, this study combines Raman spectroscopy and electronic measurements carried out in highly controlled environments of carbon nanotube transistors. Assessing these data in conjunction shows that the defect density of a carbon nanotube channel has no correlation with observed threshold voltage shifts, or change in Schottky barrier, due to the presence of ambient oxygen. With these insights in mind, a dynamic adsorption-desorption model is proposed which addresses the oxygen sensitivity of carbon nanotube transistors. Instrumentation and computational developments which facilitated these measurements are also disclosed.
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