Nonequilibrium carrier distributions in gallium-arsenide probed by electronic Raman scattering.

摘要

Inelastic light scattering is used to probe nonequilibrium carrier distributions in active GaAs and GaAs-AlGaAs devices. Devices with thin active regions or bandgap discontinuities may produce carrier distributions which are significantly different from those of bulk material. Heterostructure devices were designed to efficiently inject high velocity electrons into a short drift region where the carriers suffer few collisions. These structures may exhibit high average velocity carriers, resulting in a new class of very high speed devices. The direct measurement of the nonequilibrium carrier distributions in these structures is the primary objective of this work.;Unlike many photo-excited nonequilibrium studies, this work examines carrier distributions in electrically biased N