A study of signal generation and charge collection in amorphous silicon:hydrogen diodes for radiation imaging.

摘要

Hydrogenated amorphous silicon (a-Si:H) has been investigated as a material for radiation detectors. Its high radiation resistivity and large-area capability are the expected advantages of this material together with its ability to provide front-end readout electronics in the vicinity of the sensor element. Electrons and holes created by incoming charged particles, X-rays,