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Characterization of molecular semiconductor and multilayer molecular organic photoconductor interfaces by photoelectrochemistry and surface analytical techniques.

机译:通过光电化学和表面分析技术表征分子半导体和多层分子有机光电导体界面。

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摘要

Organic semiconductor thin films are of interest to us for a variety of molecular electronic applications, including solar cells, chemical sensors, and nonlinear optical devices. We have been seeking unusual new ways of controlling the composition and long-range molecular structure of these materials through the use of vacuum deposition techniques which mimic, in some ways, those used for epitaxial layer growth in inorganic materials.; Thin films of perylene tetracarboxylic dianhydride (PTCDA) have been examined as electrodes and photoelectrodes on both metal and metal oxide substrates. In contrast to most previous studies of phthalocyanine thin films, these materials behaved in such a way as to suggest n-type character, i.e. dark electron transfer reactions were facile in negative potential regions with solution redox couples, and little dark electrochemistry could be observed in regions of positive potentials. It is likely that junction formation occurs only as a result of illumination, with different rates of interfacial hole and electron injection and transport, at the PTCDA/electrolyte interface. Electron microscopy of the PTCDA films indicated that they were deposited as elongated crystallites, with relatively large spaces between individual crystallites, which strongly affected their dark and photoelectrochemical behavior, especially on Au substrates. Electrochemical polymerization of {dollar}alpha{dollar}-napthol was carried out to passivate sites that were electrochemically active in the dark, a treatment which greatly enhanced the overall electrochemical activity of these PTCDA thin films.; A variety of p-n heterojunction-like structures, created from thin film molecular materials (vanadyl phthalocyanine (VOPc) and perylene tetra-carboxylic dianhydride (PTCDA)), have been nondestructively explored by photoelectrochemical techniques and UHV surface analytical techniques. Vacuum deposited bilayers and multilayers of these thin films behave like "p-n" diodes over a narrow potential window. The open circuit photopotential is determined by the junction potential formed at the Pc/PTCDA interface. It was found that the transient photocurrent (using a modulated light source) in multilayer VOPc/PTCDA assemblies was directly related to the number of interfaces present, consistent with the idea that exciton dissociation is localized primarily to such an interface, and is the photocurrent limiting process.
机译:有机半导体薄膜对我们来说对包括太阳能电池,化学传感器和非线性光学器件在内的各种分子电子应用都非常重要。我们一直在寻求通过使用真空沉积技术来控制这些材料的组成和远程分子结构的新方法,这种方法在某些方面模仿了无机材料中外延层生长所采用的方法。已研究了per四羧酸二酐(PTCDA)薄膜作为金属和金属氧化物基材上的电极和光电极。与大多数以前的酞菁薄膜研究相反,这些材料表现出暗示n型特征的行为,即在带有溶液氧化还原对的负电势区域中,暗电子转移反应很容易,并且几乎看不到暗电化学。正电位区域。可能仅在PTCDA /电解质界面上以不同的界面空穴和电子注入和传输速率照射导致结形成。 PTCDA薄膜的电子显微镜观察表明,它们以细长的微晶形式沉积,单个微晶之间具有相对较大的空间,这强烈影响了它们的暗态和光电化学行为,尤其是在Au衬底上。进行{dollar}α{dollar}-萘酚的电化学聚合以钝化在黑暗中具有电化学活性的位点,该处理极大地增强了这些PTCDA薄膜的整体电化学活性。由薄膜分子材料(钒基酞菁(VOPc)和per四羧酸二酐(PTCDA))形成的各种p-n异质结状结构已通过光电化学技术和UHV表面分析技术进行了无损探究。这些薄膜的真空沉积双层和多层在狭窄的电位窗口上的行为类似于“ p-n”二极管。开路光电势由在Pc / PTCDA界面上形成的结电势确定。发现多层VOPc / PTCDA组件中的瞬态光电流(使用调制光源)与存在的界面数量直接相关,这与激子离解主要局限在这种界面上的想法是一致的,并且这是光电流限制处理。

著录项

  • 作者

    Danziger, James Lee.;

  • 作者单位

    The University of Arizona.;

  • 授予单位 The University of Arizona.;
  • 学科 Chemistry Analytical.
  • 学位 Ph.D.
  • 年度 1990
  • 页码 238 p.
  • 总页数 238
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

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