I. Synthesis of metal-organic chemical vapor deposition precursors and their use in oxide thin film depositions and II. Synthesis of monomeric tantalum(IV) amido complexes.

摘要

I. Highly transparent ZnO thin films were prepared by atmospheric pressure CVD using a new zinc source, (EtZnNEt{dollar}sb2rbrack sb2{dollar}, at substrate temperatures of 250-350{dollar}spcirc{dollar}C. Atmospheric pressure CVD using Zn(N(SiMe{dollar}sb3)sb2)sb2{dollar} or Zn(N(t-Bu)(SiMe{dollar}sb3))sb2{dollar} in combination with oxygen gave zinc silicate films with various compositions at substrate temperatures of 400-550{dollar}spcirc{dollar}C.; The new group 13 oxide film precursors Ga(OR{dollar}sb{lcub}rm f{rcub})sb3{dollar}(HNMe{dollar}sb2{dollar}) (R{dollar}sb{lcub}rm f{rcub}{dollar} = CH(CF{dollar}sb3)sb2){dollar} and (H{dollar}sb2{dollar}NEt{dollar}sb2{dollar}) (In(OR{dollar}sb{lcub}rm f{rcub})sb4{dollar}(HNEt{dollar}sb2{dollar})) were synthesized from M(NR{dollar}sb2)sb3{dollar} compounds and alcohol. Low pressure chemical vapor deposition using the new precursors in combination with air gave gallium oxide films at 250-450{dollar}spcirc{dollar}C and fluorine-doped indium oxide at 200-450{dollar}spcirc{dollar}C. The indium oxide films were highly transparent in the visible region ({dollar}>{dollar}90%), and the lowest resistivity (1.6 {dollar}times{dollar} 10{dollar}sp{lcub}-3{rcub}{dollar} {dollar}Omega{dollar} cm) was measured for a film with composition In{dollar}sb2{dollar}0{dollar}sb{lcub}2.8{rcub}{dollar}F{dollar}sb{lcub}0.2{rcub}{dollar} deposited at 450{dollar}spcirc{dollar}C.; M(N(SiMe{dollar}sb3)sb2)sb2{dollar} reacted with R{dollar}sb{lcub}rm f{rcub}{dollar}OH and amine to give M(OR{dollar}sb{lcub}rm f{rcub})sb2{dollar}L (M = Ge, L = py or H{dollar}sb2{dollar}NPh; M = Sn, L = HNMe{dollar}sb2{dollar} or py) and (Pb({dollar}mu{dollar}-OR{dollar}sb{lcub}rm f{rcub}{dollar})(OR{dollar}sb{lcub}rm f{rcub})(p{dollar}-pyNMe{dollar}sb2)rbracksb2,{dollar} and M(NMe{dollar}sb2)sb2{dollar} reacted with R{dollar}sb{lcub}rm f{rcub}{dollar}OH to produce Sn(OR{dollar}sb{lcub}rm f{rcub})sb2{dollar}(HNMe{dollar}sb2){dollar} and {dollar}{lcub}{dollar}((Me{dollar}sb2{dollar}NH{dollar}sb2{dollar}) (Pb({dollar}mu{dollar}-OR{dollar}sb{lcub}rm f{rcub}{dollar})(OR{dollar}sb{lcub}rm f{rcub})sb2{dollar}) {dollar}{rcub}sb2{dollar}. Low pressure chemical vapor deposition using air and Sn(OR{dollar}sb{lcub}rm f{rcub})sb4{dollar}(HNMe{dollar}sb2)sb2{dollar}, synthesized from Sn(NMe{dollar}sb2)sb4,{dollar} and R{dollar}sb{lcub}rm f{rcub}{dollar}OH gave fluorine-doped tin oxide films that were highly transparent in the visible region ({dollar}>{dollar}85%) and conductive. The use of tin(II) Sn(OR{dollar}sb{lcub}rm f{rcub})sb2{dollar}(HNMe{dollar}sb2{dollar}) in combination with air or water vapor gave films with composition SnO{dollar}sb{lcub}0.9-1.1{rcub}{dollar}F{dollar}sb{lcub}0.1-0.4{rcub}{dollar}.; II. Ta(N(SiMe{dollar}sb3)sb2)sb2{dollar}Cl{dollar}sb3{dollar} reacted with Na/Hg to give Ta(N(SiMe{dollar}sb3)sb2)sb2{dollar}Cl{dollar}sb2{dollar}, and Ta(NEt{dollar}sb2)sb2{dollar}Cl{dollar}sb3{dollar} reacted with LiNPh{dollar}sb2{dollar} and Na/Hg to yield Ta(NPh{dollar}sb2)sb2{dollar}(NEt{dollar}sb2)sb2{dollar}. Ta(N(SiMe{dollar}sb3)sb2)sb2{dollar}Ph{dollar}sb2{dollar} was prepared by reacting Ta(N(SiMe{dollar}sb3)sb2)sb2{dollar}Cl{dollar}sb2{dollar} with LiPh. X-Ray crystallographic studies showed that Ta(N(SiMe{dollar}sb3)sb2)sb2{dollar}Cl{dollar}sb2{dollar}, Ta(N(SiMe{dollar}sb3)sb2)sb2{dollar}Ph{dollar}sb2{dollar} and Ta(NPh{dollar}sb2)sb2{dollar}(NEt{dollar}sb2)sb2{dollar} had distorted tetrahedral geometries.