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Wetting kinetics and interfacial reaction of lead-based and lead-free solder alloys on copper and nickel metallizations in electronic packaging.

机译:铅基和无铅焊料合金在电子包装中铜和镍金属上的润湿动力学和界面反应。

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摘要

In this research, which was motivated by technological and environmental concerns, we have conducted a systematic study of the wetting behavior and the interfacial reaction of lead (Pb)-based solders and Pb-free solders on metal surfaces: Cu sheet, Ni sheet, and Cu thin-films.; In the wetting experiment, it is shown that the wetting tip and wetting interface are not in static equilibrium due to the reaction. The wetting angle remains constant after the initial spreading, but eutectic SnPb solder forms a side band at the wetting tip. The side band formation at the wetting tip is characteristic of the eutectic SnPb solder, not necessary in other solders. In the reactive wetting, such as solder reaction, the free energy change by compound formation must be considered besides the surface energy balance.; In the cases of eutectic SnPb, eutectic SnBi, and eutectic SnAg on Cu, their interaction leads to Cu Sn intermetallic compound formation, but not compounds of Cu-Pb, Cu-Bi, and Cu-Ag. The Cu-Sn compounds do not form layered structures, rather the {dollar}rm Cusb6Snsb5{dollar} phase grow as scalloplike grains. The scalloplike grains grow larger but fewer with time, indicating that a ripening reaction has occurred among them. The ripening is not a constant volume process since it is accompanied by the interfacial reaction. A kinetic model of the compound growth at the interface of solder/Cu is presented, and good agreement is obtained between the values from the model and the experiment. The consumption rate of base metal (Cu) is measured by determining the change of the total volume of Cu-Sn compound as a function of time and temperature of reflow. On the other hand, in the system of solder/Ni, we observe that the {dollar}rm Nisb3Snsb4{dollar} phase forms at the solder/Ni interface and it grows very slowly compared to that in the solder/Cu system.; In the solder reaction on thin-film metallization, the spalling of the Cu-Sn compounds at the solder interface is an important issue of reliability. We have found that the spalling of compound grains on the thin film starts after the solder reaction has consumed all the Cu, and is assisted by the ripening among the grains. This spalling causes the dewetting of the solder on the exposed Cr or Ti underlayer.; In phasing Cr and Cu, the crystallites of Cr and Cu are intermixed. Since the Sn reacts only with Cu in the Cr-Cu phased structure, the intermetallics of Cu-Sn become locked into the Cr so that they will not separate easily. Although the phased Cr-Cu film structure has good resistance to spalling in the reflow with 95Pb-5Sn solder, we have observed spalling in the reaction of high-Sn solder on the phased structure due to its high Sn content. In addition, we have observed an asymmetric spalling phenomenon using a sandwich structure, in which two wafers were soldered face-to-face. The spalling tends to occurs predominantly at the bottom interface of the solder joint under the influence of gravity.
机译:在这项研究中,出于技术和环境方面的考虑,我们对基于铅(Pb)的焊料和无铅焊料在金属表面上的润湿行为和界面反应进行了系统的研究:Cu板,Ni板,和铜薄膜。在润湿实验中,表明由于该反应,润湿尖端和润湿界面不处于静态平衡。初始铺展后,润湿角保持恒定,但共晶SnPb焊料在润湿尖端形成了一条边带。在润湿尖端形成的边带是共晶SnPb焊料的特征,而其他焊料则不需要。在诸如焊料反应的反应性润湿中,除了表面能平衡之外,还必须考虑由于化合物形成而产生的自由能变化。在Cu上共晶SnPb,共晶SnBi和共晶SnAg的情况下,它们的相互作用导致形成Cu Sn金属间化合物,但不会导致Cu-Pb,Cu-Bi和Cu-Ag化合物。 Cu-Sn化合物不形成层状结构,相反{rm} Cusb6Snsb5 {dol}相随着扇贝状晶粒生长。扇贝状的晶粒长大,但随着时间的推移变少,表明它们之间发生了熟化反应。成熟不是恒定体积的过程,因为它伴随界面反应。建立了焊料/ Cu界面上化合物生长的动力学模型,并且该模型与实验值之间取得了很好的一致性。通过确定Cu-Sn化合物总体积随回流时间和温度的变化来测量贱金属(Cu)的消耗率。另一方面,在焊料/镍体系中,我们观察到{rm} rm Nisb3Snsb4 {dollar}相在焊料/ Ni界面形成,并且与焊料/ Cu体系相比,其生长非常缓慢。在薄膜金属化的焊料反应中,焊料界面处的Cu-Sn化合物散裂是可靠性的重要问题。我们发现,在焊料反应消耗掉所有的Cu之后,薄膜上化合物晶粒的散裂开始,并且在晶粒间的成熟帮助下。这种剥落会导致焊料在裸露的Cr或Ti底层上脱湿。在定相Cr和Cu时,Cr和Cu的微晶相互混合。由于在Cr-Cu相结构中,Sn仅与Cu反应,因此Cu-Sn的金属间化合物被锁定在Cr中,因此它们不易分离。尽管在95Pb-5Sn焊料中,相控Cr-Cu膜结构对回流具有良好的抗剥落性,但由于其高Sn含量,我们已经观察到高锡焊料在相控结构上的反应中会发生剥落。此外,我们已经观察到使用三明治结构的不对称剥落现象,其中两个晶片面对面焊接。在重力的影响下,剥落往往主要发生在焊点的底部界面。

著录项

  • 作者

    Kim, Harqkyun.;

  • 作者单位

    University of California, Los Angeles.;

  • 授予单位 University of California, Los Angeles.;
  • 学科 Engineering Materials Science.; Engineering Electronics and Electrical.; Engineering Metallurgy.
  • 学位 Ph.D.
  • 年度 1996
  • 页码 143 p.
  • 总页数 143
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;无线电电子学、电信技术;冶金工业;
  • 关键词

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