Design, fabrication and characterization of high performance InGaAs/InP focal plane arrays in the 1--2.6 micron wavelength region.

摘要

his research thesis describes a new ;Each element of the focal plane array consisted of a 13 x 500 um;A unique and novel Si read-out multiplexer was designed and fabricated using radiation hardened N-well CMOS process. Each multiplexer unit cell consisted of a capacitive transimpedance amplifier, correlated double sampling circuit, threshold nonuniformity correction circuit and an output buffer stage.;Integration and testing of InGaAs focal plane arrays with cut-off wavelengths of 1.7