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Manufacturing test simulator for chips.

机译:芯片制造测试模拟器。

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This dissertation presents Manufacturing Test SIMulator for Chips(MTSIM-C). MTSIM-C is a concurrent engineering tool to predict the manufacturing test cost, yield, and quality of an integrated circuit(IC) in the early stage of the design cycle. MTSIM-C predicts the chip manufacturing yield, the fault coverage, and the testing cost for a given manufacturing environmental information. MTSIM-C helps chip manufacturers to identify future manufacturing problems in the early stage of the design cycle, and can help to avoid costly DFT mistakes.;A board and Multi-Chip Module(MCM) level manufacturing test simulator, MTSIM-B [1], has been developed to analyze the board and MCM level manufacturing test. The purpose of MTSIM-C is to develop a simulator with similar architecture as MTSIM-B, but targeting chip level manufacturing test. Several manufacturing parameters have to be predicted in order to select the optimum test strategy. The manufacturing parameters include the chip yield and the fault coverages of various test methodologies are estimated. Once the chip yield and the fault coverage are estimated, the chip manufacturing test cost can be estimated.;The difficulty of predicting chip yield in the early stage of the design cycle is due to the fact that chip layout is often not available at the time. Therefore, the first objective of MTSIM-C is to develop a yield model which predicts chip yield without detailed netlist or layout information. A chip yield can be estimated using defect density and sensitive area. A sensitive area model was developed to predict chip's sensitive area based on circuit information such as gate count, unique signal net count, and circuit type (random logic, memory, datapath). The chip yield can be projected by incorporating the sensitive area and the fabrication defect density using the available yield equations. Our second objective is to develop a set of fault coverage models. The goal of developing the fault coverage models is to achieve the first order approximation of fault coverage under different Design for Testability (DFT) techniques. The fault coverage model obtained from this research is an exponentially decaying function with three parameters, which include the fault coverage upper bound, UB, the fault coverage lower bound, LB, and the rate of fault coverage change, alpha. The fault coverages using three DFT techniques, which include no DFT, Scan, Iddq testing, are predicted using circuit information, such as gate count, IO count, and FF count. These parameters are often readily available at the early stage of the design cycle. Finally, a chip manufacturing test cost model, which incorporates the yield and fault coverage information with other manufacturing environmental information, is developed to predict the chip testing cost.
机译:本文提出了芯片制造测试模拟器(MTSIM-C)。 MTSIM-C是一项并行工程工具,可以在设计周期的早期阶段预测集成电路的制造测试成本,良率和质量。 MTSIM-C可以根据给定的制造环境信息预测芯片的生产良率,故障覆盖率和测试成本。 MTSIM-C可帮助芯片制造商在设计周期的早期识别未来的制造问题,并有助于避免代价高昂的DFT错误。;板卡和多芯片模块(MCM)级制造测试模拟器MTSIM-B [1 ],已经开发出来,可以分析电路板和MCM级制造测试。 MTSIM-C的目的是开发一种与MTSIM-B具有类似架构的仿真器,但其目标是芯片级制造测试。为了选择最佳测试策略,必须预测几个制造参数。制造参数包括芯片成品率,并估算了各种测试方法的故障覆盖率。一旦估计了芯片良率和故障覆盖率,就可以估计出芯片制造测试成本。在设计周期的早期阶段预测芯片良率的困难是由于当时通常没有可用的芯片布局这一事实。 。因此,MTSIM-C的第一个目标是开发一种无需详细网表或布局信息即可预测芯片良率的良率模型。可以使用缺陷密度和敏感面积来估计芯片成品率。开发了一个敏感区域模型,以根据电路信息(例如门数,唯一信号网数和电路类型(随机逻辑,存储器,数据路径))预测芯片的敏感区域。可以通过使用可用的成品率方程合并敏感区域和制造缺陷密度来预测芯片良率。我们的第二个目标是开发一套故障覆盖率模型。开发故障覆盖率模型的目的是在不同的可测试性设计(DFT)技术下实现故障覆盖率的一阶近似。从本研究获得的故障覆盖率模型是具有三个参数的指数衰减函数,包括故障覆盖率上限UB,故障覆盖率下限LB和故障覆盖率变化率α。使用电路信息(例如门数,IO数和FF数)预测使用三种DFT技术(包括不进行DFT,扫描,Iddq测试)的故障范围。这些参数通常在设计周期的早期就很容易获得。最后,开发了一种芯片制造测试成本模型,该模型将良率和故障覆盖率信息与其他制造环境信息相结合,以预测芯片测试成本。

著录项

  • 作者

    Kim, Vonkyoung.;

  • 作者单位

    Colorado State University.;

  • 授予单位 Colorado State University.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 1997
  • 页码 328 p.
  • 总页数 328
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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