The investigation of biaxial stress effects and the transverse piezoelectric (d(31)) characterization of lead zirconate titanate thin films.

摘要

The effect of biaxial mechanical stress on the low and high-field electrical characteristics of lead zirconate titanate (PZT) thin films was investigated. Films with 52/48, 48/52, 56/44, 40/60 and 60/40 zirconium to titanium ratios were prepared using a sol-gel procedure. Controlled stress states (compressive or tensile) were then imposed upon the films with a uniform pressure rig designed to apply a constant gas pressure to either the surface of a PZT coated silicon wafer or a PZT chip bonded to a predeformed steel substrate. The remanent polarization, coercive field strength, dielectric constant, and tan ;The wafer flexure technique was developed as a simple and inexpensive characterization tool for the transverse piezoelectric coefficient (d