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The study of alternating flow chemical vapor infiltration and a novel kinetics determination technique for the vapor deposition of silicon carbide via the decomposition of methyltrichlorosilane.

机译:交替流化学气相渗透的研究和通过甲基三氯硅烷分解气相沉积碳化硅的新的动力学测定技术。

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摘要

Ceramics matrix composites (CMC) combines the desirable characteristics of ceramics with good mechanical properties and are considered the most attractive material alternative for high temperature corrosive environments. Manufacturing CMC's is difficult due to the high melting temperature of the constitutive materials and the lack of material databases on these materials. Chemical vapor infiltration (CVI) is an attractive net-shape fabrication process for these materials and results in high quality composites.;A new type of chemical vapor infiltration is explored in this work. The Alternating Flow Chemical Vapor Infiltration (AFCVI) uses an isothermal reactor and forced flow to introduce the reactant gases into the interior of the preform. The gas flow is alternatively introduced from opposite sides of the preform to densify the composite. Composites fabricated using this process show improvement over existing isothermal processes and results in a very short cycle time. AFCVI does not, however, produce as uniformly densified parts as the forced flow thermal gradient. Initial modeling of this process emphasized the need for more accurate kinetics to accurately capture the deposition profile in the preform.;Kinetic parameters used in most CVI modeling are obtained from chemical vapor deposition (CVD) experiments. There are several fundamental differences between CVI and CVD that may affect the kinetics obtained and may limit the applicability of CVD kinetics in CVI. Namely the critical dimensions such as pore spacing and surface area to volume ratios are drastically different in these two systems. A new technique of determining the kinetic parameter specifically for CVI of SiC is developed and tested. This system consists of small 400 Um holes drilled in a solid graphite substrate. The results show excellent correlation at lower temperatures. Kinetic parameters obtained from CVD experiments severely over-predict the deposition thickness. The new parameters capture both the shape and absolute coating thickness in the CVI preform. The information obtained using this technique is unique to the kinetics preforms and gives CVI-specific knowledge.
机译:陶瓷基复合材料(CMC)结合了陶瓷的理想特性和良好的机械性能,被认为是高温腐蚀环境中最具吸引力的材料替代品。由于本构材料的熔化温度高且缺乏这些材料上的材料数据库,因此制造CMC十分困难。化学气相渗透(CVI)是一种吸引人的净形制造工艺,可用于制造这些材料,从而获得高质量的复合材料。;这项工作正在探索一种新型的化学气相渗透。交替流化学蒸气渗透法(AFCVI)使用等温反应器并强制流动将反应气体引入预成型坯内部。可选地,从预成型件的相对侧引入气流以使复合物致密。用这种方法制造的复合材料比现有的等温方法表现出改进,并且循环时间非常短。但是,AFCVI不会产生与强制流动热梯度一样均匀的致密部件。此过程的初始建模强调需要更精确的动力学来准确捕获预成型坯中的沉积轮廓。大多数CVI建模中使用的动力学参数是从化学气相沉积(CVD)实验获得的。 CVI和CVD之间存在一些基本差异,这些差异可能会影响获得的动力学,并可能限制CVD动力学在CVI中的适用性。即,在这两个系统中,诸如孔间距和表面积体积比之类的临界尺寸完全不同。开发并测试了一种确定SiC CVI动力学参数的新技术。该系统由在固态石墨基底上钻出的400 Um小孔组成。结果表明在较低温度下具有极好的相关性。从CVD实验获得的动力学参数严重高估了沉积厚度。新的参数可以捕获CVI预成型坯的形状和绝对涂层厚度。使用该技术获得的信息是动力学瓶坯所独有的,并提供了CVI特定的知识。

著录项

  • 作者

    Chiang, Daniel Young.;

  • 作者单位

    Georgia Institute of Technology.;

  • 授予单位 Georgia Institute of Technology.;
  • 学科 Materials science.;Chemical engineering.
  • 学位 Ph.D.
  • 年度 1999
  • 页码 156 p.
  • 总页数 156
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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