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Properties of superconducting BSCCO bicrystals: Implications for high-T(c) superconducting tape.

机译:BSCCO超导双晶的性质:对高T(c)超导带的影响。

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摘要

In this dissertation, we used Bi-2212 synthetically and naturally grown bicrystals for grain-boundary studies of electromagnetic properties as well as structural characteristics of many [001] twist and [100] tilt grain boundaries, which are the two most abundant grain boundaries present in Bi-tapes. Electromagnetic properties were carefully measured in various temperature and magnetic field ranges. In the study of the [001] twist grain boundary, we found that the grain boundary in the Bi-2212 bicrystal can transport as much critical current as its constituent single crystal at magnetic fields up to 9 T regardless of misorientation angle. Microstructures of the [001] twist grain boundaries were characterized by 0.17 nm high-resolution TEM (HREM), energy dispersive spectrometry (EDS), and electron energy loss spectrometry (EELS) in several bicrystals. The results also strongly supported our observation. We found no lattice expansion along the c-axis, no detectable off-stoichiometric composition, or amorphous phases near the grain boundaries. Arrays of Josephson junctions continue uninterruptedly from one single crystal across the grain boundary to the next single crystal without changing the coupling strength due to the in-plane rotation of the Cu-O double layers. Studies also show that the pairing mechanism of [001] twist grain boundaries is not pure dx2-y 2 type since the values of critical current across the grain boundaries are not affected by the inplane rotation from 0° to 180°. To increase the flux pinning in our bicrystals to the level of those grains present in the Bi-tapes, we irradiated a dozen bicrystals with 0°, 45°, 90° [001] twist grain boundary by 2.2GeV Au-ion beams along the common c-axis at a fluence of 1.0 x 1011/cm2. Our results show that the Ic across the grain boundaries is not significantly enhanced in the low temperature region even though large improvement on the irreversible temperature has been found in both grain boundary and single crystals. Therefore, we suggest that heavy ion irradiation will not dramatically increase the Ic carrying ability of highly textured Bi-tape at low temperature if the c-axis twist grain boundaries are the only current conducting path in the tapes.; Many striking results were also found in the [100] non-basal-plane-faced tilt grain boundaries. Large Tc depression is usually observed in this type of grain boundary at zero. (Abstract shortened by UMI.)
机译:在本文中,我们使用Bi-2212合成和自然生长的双晶进行了电磁性能以及许多[001]扭曲和[100]倾斜晶界的结构特征的晶界研究,这是目前存在的两个最丰富的晶界在双带中。在各种温度和磁场范围内仔细测量了电磁性能。在对[001]扭曲晶界的研究中,我们发现Bi-2212双晶中的晶界可以在高达9 T的磁场下传输与其构成的单晶一样多的临界电流,而与取向角无关。 [001]扭曲晶粒边界的微结构通过0.17 nm高分辨率TEM(HREM),能量色散谱(EDS)和电子能量损失谱(EELS)表征。结果也强烈支持我们的观察。我们没有发现沿c轴的晶格扩展,没有可检测到的非化学计量组成或靠近晶界的非晶相。约瑟夫逊结的阵列从一个单晶穿过晶界连续到达下一个单晶,而不会由于Cu-O双层的面内旋转而改变耦合强度。研究还表明,[001]扭曲晶界的配对机制并非纯dx2-y 2型,因为跨晶界的临界电流值不受0°至180°面内旋转的影响。为了将双晶中的通量钉扎增加到双带中存在的那些晶粒的水平,我们沿晶界通过2.2GeV Au离子束照射了12个晶格为0°,45°,90°[001]扭曲晶界的双晶。通量为1.0 x 1011 / cm2的普通c轴。我们的结果表明,尽管在晶界和单晶中都发现不可逆温度有了很大的改善,但在低温区域,跨晶界的Ic并未显着提高。因此,我们建议如果c轴扭曲晶粒边界是胶带中唯一的电流传导路径,那么在低温下重离子辐照不会显着提高高度织构化的Bi-tape的Ic承载能力。在[100]非基底面倾斜晶粒边界中也发现了许多惊人的结果。通常在这种晶界为零时观察到较大的Tc凹陷。 (摘要由UMI缩短。)

著录项

  • 作者

    Tsay, Yeong-Ning A.;

  • 作者单位

    State University of New York at Stony Brook.;

  • 授予单位 State University of New York at Stony Brook.;
  • 学科 Physics Condensed Matter.; Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2000
  • 页码 136 p.
  • 总页数 136
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

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