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Properties of magnetic layers fabricated by Metal Vapor Vacuum Arc (MEVVA) ion implantation into germanium.

机译:通过金属蒸气真空电弧(MEVVA)离子注入锗制造的磁性层的特性。

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摘要

Ge surfaces were implanted with Fe ions with an acceleration voltage of 30–60 kV using a Metal Vapor Vacuum Arc (MEVVA) implanter at various doses from 2 × 1015 to 5 × 1017 ions/cm2. The implanted Fe profile in Ge and the crystallinity of Ge is studied with Rutherford Backscattering spectrometry (RBS) and ion channeling. The surface morphology is observed with Atomic Force Microscopy (AFM). The implanted Fe profile in Ge is studied with Auger electron spectroscopy (AES). The size of the nanoparticles in the implanted layer is studied with Transmission Electron Microscopy (TEM). The nature of chemical bonding between Fe and Ge is studied by X-ray Photoelectron Spectroscopy (XPS). The magnetic properties of the Fe implanted Ge layer is studied with superconducting quantum interference device (SQUID) magnetometer. Magnetoresistance of the implanted layer is measured using the four-point probe method in a Helium closed cycle refrigerator.; AFM results show that the morphological characteristics of the Fe implanted Ge changes drastically depending on the ion implantation conditions. A low level of roughness is observed up to intermediate dose ∼1016 ions/cm2. The roughness increases dramatically at a dose of 5 × 1016 ions/cm2. The common structural features observed are that all surfaces are composed of grains of sub-micron size. The grains are nearly regular in shape, appearing almost spherical in the low dose range. As dose increases, trapezoidal shaped facetted columnar grains start to appear on the surface. We have found the formation of Fe-rich precipitates in Ge by the elemental mapping using scanning Auger microscopy. The evolution and growth of Fe-rich precipitates is observed with increase in dose. These precipitates are distributed homogeneously on the implanted surface. RBS random/channelling and TEM results show that Fe implanted Ge samples implanted with various doses and accelerating voltages are a mixture of a metastable crystalline phase and an amorphous phase.; The magnetic properties of Fe clusters in Ge were investigated by SQUID magnetometer for temperatures in the range of 4.2 to 300 K. The magnetization vs magnetic field measurements were taken on the samples implanted with dose 2 × 1017 ions/cm2. At low temperatures, the ferromagnetic-like behaviour of the clusters is observed. But, at room temperature, the magnetization curve shows that Fe clusters are superparamagnetic. The size of the Fe clusters (∼3.9 to 4.0 nm) is obtained by fitting the magnetization curve at 300 K. Field-cooled (FC) and zero-field-cooled (ZFC) measurements were performed on various samples to identify the superparamagnetic relaxation of the Fe clusters. The size distribution of the clusters and interaction among the clusters are evident from the behaviour of ZFC and FC curves with temperature. We have obtained a large negative magnetoresistance (GMR) at higher temperatures (up to 8.6% at 300 K for transverse geometry) Ge implanted with dose 5 × 1016 to 5 × 1017 Fe ions/cm2 (accelerating voltage 60 kV). We have obtained large positive MR for perpendicular geometry (up to 8.55% at 300 K).
机译:使用金属蒸气真空电弧(MEVVA)植入机以2×10 15 到5×10 17 <的不同剂量,以30-60 kV的加速电压向Fe表面注入Ge离子。 / super>离子/ cm 2 。用卢瑟福背散射光谱法(RBS)和离子通道研究了Ge中注入的Fe分布和Ge的结晶度。用原子力显微镜(AFM)观察表面形态。用俄歇电子能谱(AES)研究了Ge中注入的Fe分布。用透射电子显微镜(TEM)研究了植入层中纳米颗粒的尺寸。通过X射线光电子能谱(XPS)研究了Fe和Ge之间化学键的性质。用超导量子干涉仪(SQUID)磁力计研究了注入Fe的Ge层的磁性。植入层的磁阻是在氦封闭循环冰箱中使用四点探针法测量的。 AFM结果表明,Fe注入的Ge的形态特征根据离子注入条件而急剧变化。直到中等剂量〜10 16 离子/ cm 2 为止,都观察到较低的粗糙度。剂量为5×10 16 离子/ cm 2 时,粗糙度急剧增加。观察到的常见结构特征是,所有表面都由亚微米大小的晶粒组成。晶粒的形状几乎规则,在低剂量范围内几乎呈球形。随着剂量的增加,梯形的刻面圆柱状晶粒开始出现在表面上。我们已经通过使用扫描俄歇显微镜的元素映射法发现了锗中富铁沉淀物的形成。随着剂量的增加,观察到富铁沉淀物的演变和生长。这些沉淀物均匀地分布在植入表面上。 RBS随机/通道化和TEM结果表明,以不同剂量和加速电压注入的Fe注入的Ge样品是亚稳晶相和非晶相的混合物。用SQUID磁力计在4.2〜300 K范围内研究了Ge中Fe团簇的磁性。对注入2×10 17 离子的样品进行了磁化强度与磁场的测量。 / cm 2 。在低温下,观察到团簇的铁磁性行为。但是,在室温下,磁化曲线表明Fe团簇是超顺磁性的。 Fe团簇的大小(约3.9至4.0 nm)是通过拟合300 K的磁化曲线获得的。对各种样品进行了场冷(FC)和零场冷(ZFC)测量,以确定超顺磁弛豫的铁簇。从ZFC和FC曲线随温度的变化行为可以明显看出簇的大小分布和簇之间的相互作用。我们在较高温度下获得了较大的负磁阻(GMR)(横向几何尺寸在300 K下高达8.6%)植入剂量为5×10 16 至5×10 17 Fe离子/ cm 2 (加速电压60 kV)。我们已经获得了用于垂直几何的大正MR(在300 K时高达8.55%)。

著录项

  • 作者

    Ranganathan, Venugopal.;

  • 作者单位

    Chinese University of Hong Kong (People's Republic of China).;

  • 授予单位 Chinese University of Hong Kong (People's Republic of China).;
  • 学科 Engineering Electronics and Electrical.; Engineering Materials Science.; Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 2001
  • 页码 165 p.
  • 总页数 165
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;工程材料学;
  • 关键词

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