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Nanoscale electric phenomena at oxide surfaces and interfaces by scanning probe microscopy.

机译:通过扫描探针显微镜在氧化物表面和界面处产生纳米级电现象。

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摘要

Strong coupling between mechanical, electrical and magnetic properties in oxide materials, heterostructures and devices enable their widespread applications. Achieving the full potential of oxide electronics necessitates quantitative knowledge of material and device properties on the nanoscale level. In this thesis, Scanning Probe Microscopy is used to study and quantify the nanoscale electric phenomena in the two classes of oxide systems, namely transport at electroactive grain boundaries and surface behavior of ferroelectric materials.; The groundwork for the application of SPM for the determination of interface I-V characteristics avoiding contact and bulk resistivity effects is established. Scanning Impedance Microscopy (SIM) is developed to access ac transport properties. SIM allowed the interface capacitance and local C-V characteristic of the interface to be determined thus combining the spatial resolution of traditional SPMs with the precision of conventional electrical measurements. SPM of SrTiO3 grain boundaries in conjunction with variable temperature impedance spectroscopy and I-V measurements allowed to find and theoretically justify the effect of field suppression of dielectric constant in the vicinity of the electroactive interfaces in strontium titanate. Similar approaches were used to study ferroelectric properties and ac and do transport behavior in a number of polycrystalline oxides.; Polarization-related chemical properties of ferroelectric materials were investigated and quantified, leading to the discovery of the effects of potential retention above Curie temperature and temperature induced potential inversion. The origins of these phenomena were traced to the interplay between fast polarization and slow screening charge dynamics. Piezoresponse Force Microscopy (PFM) was used to study the polarization dynamics. An extensive description of contrast mechanisms in PFM conveniently represented in the form of “Contrast Mechanism Maps” was developed to relate experimental conditions such as tip radius and indentation force with the dominant tip-surface interactions. This topic was further developed to study the photochemical activity on ferroelectric surfaces as a function of domain orientation and use PFM to create predefined domain structures paving the way for photochemical assembly of metallic nanostructures on ferroelectrics.
机译:氧化物材料,异质结构和器件中机械,电和磁性能之间的强耦合使它们得以广泛应用。为了充分利用氧化物电子学的潜力,需要对纳米级材料和器件性能进行定量了解。本文采用扫描探针显微镜研究和量化了两类氧化物体系中的纳米级电现象,即在电活性晶界上的迁移和铁电材料的表面行为。建立了应用SPM来确定界面 I-V 特性以避免接触和体电阻率效应的基础。扫描阻抗显微镜(SIM)的开发旨在访问交流传输特性。 SIM允许确定接口电容和接口的局部 C-V 特性,从而将传统SPM的空间分辨率与常规电气测量的精度结合在一起。 SrTiO 3 晶界的SPM与可变温度阻抗谱和 IV 测量相结合,可以发现并在理论上证明电活性物质附近的介电常数的场抑制效应钛酸锶界面。类似的方法被用来研究铁电性能和交流电,并在许多多晶氧化物中做输运行为。研究和量化了与铁电材料的极化相关的化学性质,从而发现了居里温度以上的电势保持和温度引起的电势反转的影响。这些现象的起源可追溯到快速极化和慢速筛选电荷动力学之间的相互作用。压电响应力显微镜(PFM)用于研究极化动力学。开发了以“对比机制图”的形式方便表示的PFM对比机制的广泛描述,以将诸如尖端半径和压入力等实验条件与主要的尖端-表面相互作用相关联。进一步发展了该主题,以研究铁电表面上的光化学活性作为畴取向的函数,并使用PFM创建预定义的畴结构,为铁电体上金属纳米结构的光化学组装铺平了道路。

著录项

  • 作者单位

    University of Pennsylvania.;

  • 授予单位 University of Pennsylvania.;
  • 学科 Engineering Materials Science.; Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 2002
  • 页码 448 p.
  • 总页数 448
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

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