Reactive sputtering of dielectrics is accompanied by a slow deposition of nonconductive coatings on all inside surfaces of the vacuum chamber. In a single magnetron system, the grounded chamber walls often function as an anode. In this case, the coatings on the anode cause impedance variation of the system circuitry and, as a consequence, a voltage redistribution. In the end, circuitry interruption may even occur (“disappearing anode” problem). A solution to the disappearing anode problem is a self-cleaning anode system. This solution consists of two anodes and a single magnetron driven by a mid-frequency AC power supply via a center-taped transformer. The anodes are positioned to the side of the magnetron and are connected to the ends of the secondary coil of the transformer, while the magnetron is connected to the center tap of the transformer. Such a novel configuration is called a “Dual-Anode Reactive Magnetron Sputtering” system, and has been developed in this work. This configuration creates a self-cleaning regime for both anodes and, therefore, provides dynamically controlled self-cleaning and sustainable anodes.; To conduct and control ion bombardment of the growing film deposited in the electrically floating dual anode system, a novel AC biasing has been developed. In this biasing method, the substrate holder is connected to the magnetron through a resistor and/or an additional floating power supply. The high refractive indices of deposited Al2O3 films with biasing have proven the efficiency of such a set-up.; Introducing the dual anodes placed at a “hidden” location does not change the deposition rate distribution across the substrate holder surface, This approach also allows the application of closed-loop process control for high rate deposition of transparent and scratch-resistant Al 2O3 films.; The dual-anode reactive magnetron sputtering in conjunction with closed-loop process control and substrate biasing has been shown to be a reliable technology for high-rate deposition of dense Al2O3 and other dielectric films.
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机译：电介质的反应性溅射伴随有非导电涂层在真空室所有内表面的缓慢沉积。在单磁控管系统中，接地的腔室壁通常充当阳极。在这种情况下，阳极上的涂层会引起系统电路的阻抗变化，并因此导致电压重新分布。最后，甚至可能发生电路中断（“阳极消失”问题）。解决阳极消失问题的方法是使用自清洁阳极系统。该解决方案由两个阳极和一个磁控管组成，该磁控管由中频交流电源通过中心抽头变压器驱动。阳极位于磁控管的侧面，并连接到变压器次级线圈的末端，而磁控管则连接到变压器的中心抽头。这种新颖的配置被称为“双阳极反应磁控溅射”系统，并且在这项工作中得到了发展。这种配置为两个阳极都创建了自清洁机制，因此提供了动态控制的自清洁和可持续阳极。为了进行和控制沉积在电浮动双阳极系统中的生长膜的离子轰击，已经开发了一种新型的交流偏压。在这种偏压方法中，衬底支架通过电阻器和/或附加的浮动电源连接到磁控管。具有偏压的沉积的Al 2 O 3 膜的高折射率已证明了这种设置的效率。引入放置在“隐藏”位置的双阳极不会改变整个衬底支架表面的沉积速率分布。这种方法还允许闭环过程控制的应用，以实现透明且耐刮擦的Al 的高速率沉积2 O 3 个影片。结合闭环过程控制和衬底偏压的双阳极反应磁控溅射已被证明是高速率沉积高密度Al 2 O 3 和其他介电膜。
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